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Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC

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Abstract:

4H-SiC samples implanted with 1020 Al were annealed at various temperatures with a BN/AlN or graphite cap, and there morphological, structural, and electrical properties are compared. No blow holes were observed in either cap. Some Si out-diffuses through the graphite cap which results in a rougher surface and a structurally modified region near the surface. The BN/AlN cap annealed at 1800°C cannot be readily removed, whereas the graphite cap can be removed easily after any annealing temperature. The sheet resistances for both types of samples were about the same.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

575-578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.575

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Cite this paper

Online since:

September 2007

Authors:

Kenneth A. Jones, M.C. Wood, T.S. Zheleva, K.W. Kirchner, Michael A. Derenge, A. Bolonikov, Tangali S. Sudarshan, R.D. Vispute, Shiva S. Hullavarad, S. Dhar

Keywords:

Aluminum Nitride (AlN), Annealing Cap, Graphite, Ion Implantation

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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