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Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects

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Abstract:

In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the [0001] basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

889-894

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.889

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Online since:

September 2007

Authors:

Wolfgang Bartsch, Heinz Mitlehner, S. Gediga

Keywords:

Bipolar Diode, Emitter Efficiency, p-Emitter, PiN Diode, Transient Measurement

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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