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Defects in Semiconductors 16

Materials Science Forum Volumes 83 - 87

• Papers
• Abstracts

• p1 Microstructure of Hydrogen and Dopants in Hydrogenated Amorphous Silicon   [ 315 K ]
  Authors: J.B. Boyce, S.E. Ready
• p9 Elastic Energy Loss due to the Reorientation of H around B in Silicon   [ 247 K ]
  Authors: G. Cannelli, R. Cantelli, M. Capizzi, Francesco Cordero, A. Frova, M. Stutzmann, F. Trequattrini
• p15 Kinetics of In-H and Cd-H Complexes in Silicon   [ 236 K ]
  Authors: M. Gebhard, B. Vogt, W. Witthuhn
• p21 Diffusion and Drift of Hydrogen in Si and GaAs   [ 280 K ]
  Authors: A.W.R. Leitch, T. Zundel, T. Prescha, Joerg Weber
• p27 New Traps for H⁰ in Boron- and Phosphorus-Doped Si   [ 194 K ]
  Authors: Levente Korpas, James W. Corbett, Stefan K. Estreicher
• p33 Hydrogen-Induced Platelets in Silicon: Separation of Nucleation and Growth   [ 371 K ]
  Authors: N.M. Johnson, C. Herring, C. Doland, J. Walker, G.B. Anderson, F.A. Ponce
• p39 An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p⁺ Layers in Silicon   [ 392 K ]
  Authors: A.D. Marwick, M. Wittmer, G.S. Oehrlein
• p45 Hydrogen Effusion from Monocrystalline B-Doped Silicon   [ 198 K ]
  Authors: D. Ballutaud, P. de Mierry, J.C. Pesant, Richard Rizk, A. Boutry-Forveille, M. Aucouturier
• p51 Effect of Multiple Trapping on Hydrogen Diffusion in Silicon   [ 247 K ]
  Authors: Jeffrey T. Borenstein, James W. Corbett, S.J. Pearton
• p57 Long-Range Correlations and Hydrogen Diffusion in Silicon   [ 341 K ]
  Authors: James W. Corbett, Igor V. Verner