Paper Titles

Bound Exciton Spectra in Semi-Insulating GaAs
p.201

Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors
p.207

Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide
p.213

Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide
p.219

Photoluminescence of Germanium Doped Gallium Arsenide
p.225

Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure
p.231

Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs
p.237

Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates
p.243

Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States
p.249

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Photoluminescence of Germanium Doped Gallium...

Photoluminescence of Germanium Doped Gallium Arsenide

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

225-230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.225

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Online since:

November 1995

Authors:

Taketo Watanabe, Masashi Suezawa, Koji Sumino

Keywords:

Donor-Acceptor Pair, GaAs, Ge, Photoluminescence (PL)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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