Paper Titles

Creation of the DLC Layer by the Dual Beam IBAD Technique
p.221

Application of High Energy Ion Beams for Local Lifetime Control in Silicon
p.225

Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry
p.229

Plasma Immersion Ion Implantation of Nitrogen into Porous Silicon Layers
p.233

Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis
p.237

Lattice Damage of Relaxed Si_1-xGe_x Alloys of Various Composition Implanted with 2 MeV Si Ions
p.241

Auger Depth Profiling with Good Depth Resolution of Low Energy Implantation Induced Ion Mixing
p.245

Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures
p.249

Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen
p.253

HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Formation of Buried SiC Layers in Silicon by Ion...

Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis

Article Preview

Abstract:

You might also be interested in these eBooks

Materials Science Applications of Ion Beam Techniques

Info:

Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

237-240

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.237

Citation:

Cite this paper

Online since:

May 1997

Authors:

K. Volz, J.K.N. Lindner, B. Stritzker

Keywords:

Ion Beam Synthesis, Ion Implantation, Silicon, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: