Paper Titles

Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates
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Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
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Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
p.1351

Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
p.1355

Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope
p.1359

Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN
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Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs
p.1367

Surface Polariton Raman Spectroscopy in Cubic GaN Epitaxial Layers
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Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Photoluminescence and Raman Scattering...

Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope

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Abstract:

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1359-1362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1359

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Online since:

February 1998

Authors:

Zhe Chuan Feng, M. Schurman, C.A. Tran, T. Salagaj, B. Karlicek, Ian T. Ferguson, R.A. Stall, C.D. Dyer, K.P.J. Williams, G.D. Pitt

Keywords:

AlGaN, Gallium Nitride (GaN), InGaN, Microscope, Photoluminescence (PL), Raman Scattering

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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