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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts

• p3 Silicon Carbide Technology in New Era   [ 312 K ]
  Authors: Hiroyuki Matsunami
• p9 Characterisation and Defects in Silicon Carbide   [ 526 K ]
  Authors: J.P. Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, B. Magnusson, S.G. Sridhara, G.R. Pozina, H. Lendenmann, Erik Janzén
• p15 Opportunities and Technical Strategies for Silicon Carbide Device Development   [ 367 K ]
  Authors: James A. Cooper
• p23 High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production   [ 305 K ]
  Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John Palmour, Calvin H. Carter Jr.
• p29 Growth and Defect Reduction of Bulk SiC Crystals   [ 403 K ]
  Authors: Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno, Takashi Aigo, Hirokatsu Yashiro
• p35 Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport   [ 268 K ]
  Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Cengiz M. Balkas, A.G. Timmerman
• p39 Lateral Enlargement of Silicon Carbide Crystals   [ 310 K ]
  Authors: Henrik Jacobsson, Rositza Yakimova, P. Råback, Mikael Syväjärvi, J. Birch, Erik Janzén
• p43 Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth   [ 322 K ]
  Authors: Shin Ichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai
• p47 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots   [ 248 K ]
  Authors: Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro
• p51 The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity   [ 200 K ]
  Authors: Youichi Miyanagi, Koji Nakayama, Hiromu Shiomi, Shigehiro Nishino