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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Resistivity Mapping of Semi-Insulating 6H-SiC...

Resistivity Mapping of Semi-Insulating 6H-SiC Wafers

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

135-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.135

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Online since:

April 2002

Authors:

Matthew D. Roth, V.D. Heydemann, W.C. Mitchel, Nikolay K. Yushin, M. Sharma, Shao Ping Wang, Cengiz M. Balkas

Keywords:

6H-SiC, Activation Energy, Hall-Effect, Mapping, Resistivity, Semi-insulating (SI), Uniformity

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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