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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Gallium Nitride Metal-Insulator-Semiconductor...

Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1535-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1535

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Online since:

April 2002

Authors:

Kevin Matocha, T. Paul Chow, Ronald J. Gutmann

Keywords:

Capacitors, Conductance Technique, Interface State Density (D_it), LPCVD Oxides, MIS, MOS

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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