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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Direct Synthesis and Growth of SiC Single Crystal...

Direct Synthesis and Growth of SiC Single Crystal from Ultrafine Particle Precursor

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

159-164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.159

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Online since:

April 2002

Authors:

Yoshimitsu Yamada, Kazukiyo Sagawa

Keywords:

Carbothermal Reduction, Continuous Growth, Micropipe, Precursor, Silicon Carbide (SiC), Single Crystal, SiO₂, Ultra-Fine Particles

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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