Paper Titles
Nitrogen Delta Doping in 4H-SiC Epilayers
p.153
Temperature Effects in SiC Epitaxial Growth
p.157
Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD
p.161
Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
p.165
Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
p.169
Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
p.173
Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes
p.177
Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?
p.181
Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
p.185

Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

169-172

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.169

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Online since:

September 2003

Authors:

Mikael Syväjärvi, Rositza Yakimova, R.R Ciechonski, Alexander A. Lebedev, D.V. Davydov, Erik Janzén

Keywords:

Boron, Deep Level, Epitaxy, Sublimation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

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