Paper Titles

SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures
p.237

Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers
p.241

Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
p.247

Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
p.253

Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
p.257

Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
p.261

Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
p.265

Doping-Related Strain in n-Doped 4H-SiC Crystals
p.269

Stacking Faults in 3C-SiC Relax Lattice Deformation
p.273

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Lattice Dynamics of 4H-SiC by Inelastic X-Ray...

Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

257-260

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.257

Citation:

Cite this paper

Online since:

September 2003

Authors:

J. Serrano, J. Strempfer, M. Cardona, M. Schwoerer-Böhning, H. Requardt, M. Lorenzen, B. Stojetz, P. Pavone, Wolfgang J. Choyke

Keywords:

4H-SiC, Inelastic X-Ray Scattering, Phonon Dispersion Relations

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: