Paper Titles
Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
p.265
Doping-Related Strain in n-Doped 4H-SiC Crystals
p.269
Stacking Faults in 3C-SiC Relax Lattice Deformation
p.273
Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
p.277
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
p.281
Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
p.285
High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals
p.289
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
p.293
Dynamics of 4H-SiC Plasticity
p.297

Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

281-284

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.281

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Online since:

September 2003

Authors:

Rositza Yakimova, Mikael Syväjärvi, T. Iakimov, A.O. Okunev, V.E. Udal'tsov, Erik Janzén

Keywords:

Structural Defects, Sublimation Growth, Transition Layer

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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