Paper Titles
Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
p.349
Raman Imaging Analysis of SiC Wafers
p.353
Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
p.357
Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
p.361
Electrical and Optical Characterization of SiC
p.365
Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
p.371
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
p.375
Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
p.379
On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC
p.383

Electrical and Optical Characterization of SiC

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials - 2002 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

365-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.365

Citation:

Cite this paper

Online since:

September 2003

Authors:

Gerhard Pensl, Frank Schmid, Florin Ciobanu, Michael Laube, Sergey A. Reshanov, Norbert Schulze, Kurt Semmelroth, Adolf Schöner, Günter Wagner, Hiroyuki Nagasawa

Keywords:

Admittance Spectroscopy, Aluminum Acceptors, Aluminum-Related Defect Centers, FTIR Transmission, Hall Scattering Factor for Holes, Hall-Effect, Phosphorus Donors

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] G. Rutsch, R. P. Devaty, W. J. Choyke, D. W. Langer, L. B. Rowland, J. Appl. Phys. Vol. 84 (1998), p. (2062).

Google Scholar

[2] D. Schulz, K. Irmscher, J. Dolle, W. Eiserbeck, T. Müller, H. -J. Rost, D. Siche, G. Wagner, J. Wollweber, Mater. Sci. Forum Vol. 338-342 (2000), p.87.

DOI: 10.4028/www.scientific.net/msf.338-342.87

Google Scholar

[3] M. A. Capano, R. Santhakumar, R. Venugopal, M. R. Melloch, J. A. Cooper, Jr., J. Electron. Mater. Vol. 29 (2000), p.210.

Google Scholar

[4] S. Greulich-Weber, phys. stat. sol. (a) Vol. 162 (1997), p.95.

Google Scholar

[5] K. Semmelroth, F. Schmid, D. Karg, G. Pensl, M. Maier, S. Greulich-Weber, J. -M. Spaeth, these Conference Proceedings.

Google Scholar

[6] G. Wellenhofer, U. Rössler, phys. stat. sol. (b) Vol. 202 (1997), p.107.

Google Scholar

[7] A. Schöner, Dissertation, Erlangen, (1994).

Google Scholar

[8] F. Szmulowicz, Phys. Rev. B Vol. 28 (1983), p.5943.

Google Scholar

[9] S. A. Reshanov, O. Klettke, G. Pensl, these Conference Proceedings.

Google Scholar

[10] W. Suttrop, G. Pensl, W. J. Choyke, R. Stein, S. Leibenzeder, J. Appl. Phys. Vol. 72 (1992), p.3708.

Google Scholar

[11] R. A. Faulkner, Phys. Rev. Vol. 184 (1969), p.713.

Google Scholar

[12] W. M. Chen, N. T. Son, E. Janzen, D. M. Hofmann, B. K. Meyer, phys. stat. sol. (a) Vol. 162 (1997), p.79.

Google Scholar

[13] B. Gerlach, J. Pollmann, phys. stat. sol. (b) Vol. 67 (1975), p.93.

Google Scholar

[14] S. G. Shridhara, L. L. Clemen, D. G. Nizher, R. P. Devaty, W. J. Choyke, D. J. Larkin, Mat. Sci. Forum Vol. 264-268 (1998), p.465.

Google Scholar

[15] T. Troffer, Dissertation, Erlangen, (1998).

Google Scholar