Paper Titles
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
p.459
Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
p.463
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
p.467
Identification and Annealing of Common Intrinsic Defect Centers
p.471
Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation
p.477
Nitrogen-Vacancy Complexes in SiC – Final Annealing Products of the Silicon Vacancy?
p.481
A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
p.487
Theoretical Study of Antisite Aggregation in α-SiC
p.491
EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC
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Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

477-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.477

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Online since:

September 2003

Authors:

Atsuo Kawasuso, Masahito Yoshikawa, Masaki Maekawa, Hisayoshi Itoh, Toshinobu Chiba, F. Redmann, Reinhard Krause-Rehberg, Michael Weidner, Thomas Frank, Gerhard Pensl

Keywords:

Annealing, Electron Irradiation, He-Implantation, Positron Annihilation, Vacancy

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] A. Kawasuso, F. Redmann, R. Krause-Rehberg,T. Frank, M. Weidner, G. Pensl,P. Sperr,H. Itoh: J. Appl. Phys. 90 (2001) 3377.

DOI: 10.1063/1.1402144

Google Scholar

[2] A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshauser and H. Itoh, Appl. Phys. Lett., 79 (2001)3950.

DOI: 10.1063/1.1426259

Google Scholar

[3] A. Kawasuso, M. Weidner, F. Redmann, T. Frank, P. Sperr, R. Krause-Rehberg and G. Pensl, Physica B: Condensed Matter, 308-310 (2001) 660.

DOI: 10.1016/s0921-4526(01)00783-9

Google Scholar

[4] A. Kawasuso et al, to be published in Phys. Rev. B.

Google Scholar

[5] R. Devanathan, W. J. Weber and F. Gao, J. Appl. Phys. 90 (2001)2303.

Google Scholar

[6] A. Kawasuso, H. Itoh, M. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura and S. Yoshida, Appl. Phys. A67 (1998) 209.

Google Scholar

[7] H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura and S. Yoshida, Phys. Stat. Sol. (a)162 (1997) 173.

DOI: 10.1002/1521-396x(199707)162:1<173::aid-pssa173>3.0.co;2-w

Google Scholar