Paper Titles
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
p.1057
High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas
p.1061
Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face
p.1065
Avalanche Multiplication and Breakdown in 4H-SiC Diodes
p.1069
Investigation of Rapid Thermal Annealed pn-Junctions in SiC
p.1073
Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC
p.1077
Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
p.1081
Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
p.1085
Simulation and Prototype Fabrication of Microwave Modulators with 4H-SiC p-i-n Diodes
p.1089

Investigation of Rapid Thermal Annealed pn-Junctions in SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1073-1076

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1073

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Online since:

June 2004

Authors:

Martin Rambach, Roland Weiss, Lothar Frey, Anton J. Bauer, Heiner Ryssel

Keywords:

Breakdown Voltage, Edge Termination, P-N Junction, Sheet Resistance, Surface Roughness (SR)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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