Paper Titles
Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
p.131
Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
p.135
In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
p.139
Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
p.143
Microstructure of Cubic SiC Grown by the Modified Lely-Method
p.147
Growth of 3C-SiC Bulk Material by the Modified Lely Method
p.151
Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques
p.157
Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces
p.163
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
p.169

Microstructure of Cubic SiC Grown by the Modified Lely-Method

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

147-150

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.147

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Online since:

June 2004

Authors:

M. Nerding, Kurt Semmelroth, Gerhard Pensl, Hiroyuki Nagasawa, Horst P. Strunk

Keywords:

3C-SiC, Modified Lely Method, Stacking Fault, TEM

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

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