Paper Titles
In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
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Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite
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Microstructure of Cubic SiC Grown by the Modified Lely-Method
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Growth of 3C-SiC Bulk Material by the Modified Lely Method
p.151
Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques
p.157
Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces
p.163
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
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Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
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Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
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Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

157-162

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.157

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Online since:

June 2004

Authors:

X. Huang, Michael Dudley, W. Cho, Robert S. Okojie, Philip G. Neudeck

Keywords:

Characterization, High Resolution X-Ray Diffraction (HR-XRD), Reciprocal Space Mapping (RSM), SiC Epitaxial Structure

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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