Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates

F. Fossard; N. Gogneau; Eva Monroy; Le Si Dang; Sylvain Monnoye; Hugues Mank; B. Daudin

doi:10.4028/www.scientific.net/MSF.457-460.1593

Paper Titles

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
p.1577

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
p.1581

Growth and Field Emission of GaN Nanowires
p.1585

Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
p.1589

Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates
p.1593

Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition
p.1597

X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC
p.1601

Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers
p.1605

Radiotracer Spectroscopy on Group II Acceptors in GaN
p.1609

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Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates

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Silicon Carbide and Related Materials 2003

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Materials Science Forum (Volumes 457-460)

Pages:

1593-1596

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1593

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Online since:

June 2004

Authors:

F. Fossard, N. Gogneau, Eva Monroy, Le Si Dang, Sylvain Monnoye, Hugues Mank, B. Daudin

Keywords:

Correlation, Photoluminescence (PL), Quantum Dot (QD)

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