Paper Titles
GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
p.1581
Growth and Field Emission of GaN Nanowires
p.1585
Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
p.1589
Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates
p.1593
Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition
p.1597
X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC
p.1601
Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers
p.1605
Radiotracer Spectroscopy on Group II Acceptors in GaN
p.1609
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
p.1613

Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2003 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1597-1600

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1597

Citation:

Cite this paper

Online since:

June 2004

Authors:

Jae Kyeong Jeong, Ho Keun Song, Myung Yoon Um, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim

Keywords:

Gallium Nitride (GaN), MOCVD, Porous SiC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] F. Yun, M. A. reshchikov, L. He, H. Morkoc, C. K. Inoki, and T. S. Kuan: Appl. Phys. Lett. Vol. 81, (2002), p.4142.

Google Scholar

[2] K. Hiramatsu: J. Phys.: condens. Matter Vol. 13, (2001), p.6961.

Google Scholar

[3] J. K. Jeong, and H. J. Kim: J. Electrochem. Soc. Vol. 150, (2003), p. G90.

Google Scholar

[4] B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck: Appl. Phys. Lett. Vol. 68, (1996).

DOI: 10.1063/1.116495

Google Scholar