Paper Titles
Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates
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Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition
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X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC
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Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers
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Radiotracer Spectroscopy on Group II Acceptors in GaN
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Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
p.1613
An Ab Initio Study of Intrinsic Stacking Faults in GaN
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AlGaN / GaN HEMT Structures Grown on SiCOI Wafers Obtained by the Smart CutTM Technology
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Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements
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Radiotracer Spectroscopy on Group II Acceptors in GaN

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

1609-1612

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.1609

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Online since:

June 2004

Authors:

F. Albrecht, G. Pasold, Joachim Grillenberger, U. Reislöhner, Marc Dietrich, W. Witthuhn, Isolde Collaboration Isolde Collaboration

Keywords:

Acceptor, Beryllium, Deep Level, DLTS, Gallium Nitride (GaN), Magnesium

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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