Paper Titles
Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
p.297
Stress Control in 3C-SiC Films Grown on Si(111)
p.301
Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
p.305
Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows
p.309
Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers
p.313
Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films
p.317
Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate
p.321
Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH3SiH3
p.325
Growth of SiC Nanorods and Microcrystals by Carbon Nanotubes-Confined Reaction
p.329

Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

313-316

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.313

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Online since:

June 2004

Authors:

Gabriel Ferro, D. Panknin, J. Stoemenos, Carole Balloud, Jean Camassel, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa

Keywords:

3C-SiC, Epitaxy, Flash Lamp Annealing, LTPL, TEM

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

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