Paper Titles
Residual Stresses and Stacking Faults in n-Type 4H-SiC Epilayers
p.529
Stacking Fault Formation Sites and Growth in Thick-Epi SiC PiN Diodes
p.533
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
p.537
SiC Studied Via LEEN and Cathodoluminescence Spectroscopy
p.543
Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC
p.549
Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide
p.555
Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC
p.561
Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
p.565
Photoluminescence Mapping of a SiC Wafer in Device Processing
p.569

Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

549-554

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.549

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Online since:

June 2004

Authors:

Anne Henry, Martin S. Janson, Erik Janzén

Keywords:

Boron, Isoelectronic Bound-Exciton, Time-Resolved Photoluminescence, Zeeman

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] S.G. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, D.J. Larkin, H.S. Kong, T. Troffer, and G. Pensl, J. Appl. Phys. 83, 7909 (1998).

DOI: 10.1063/1.367970

Google Scholar

[2] A. Henry, U. Forsberg, M.S. Jansson and E. Janzen, J. Appl. Phys 94 (2003) 2901.

Google Scholar

[3] L. Storasta, B. Magnusson, M.K. Linnarsson, J.P. Bergman, E. Janzén, Proc. of the ECSCRM2002, Linköping, Sweden, Sep1-5, 2002, Mater. Sci. Forum 433-436 (2003) 423.

DOI: 10.4028/www.scientific.net/msf.433-436.423

Google Scholar

[4] M.S. Janson, M.K. Linnarsson, B. Magnusson, A. Henry, unpublished.

Google Scholar

[5] Y. Koshka, Appl. Phys. Lett. 82 (2003) 3280.

Google Scholar

[6] C. Peppermüller, R. Helbig, K. Rottner and A. Schöner, Appl. Phys. Lett. 70 (1997) 1014.

DOI: 10.1063/1.118468

Google Scholar

[7] P. Bergman, B. Monemar and M. -E Pistol, Phys. Rev. B 40 (1989) 12 280.

Google Scholar

[8] J. P. Bergman, O. Kordina, and E. Janzén; Phys. Status Solidi A 162 (1997) 65.

Google Scholar

[9] T. Egilsson, J. P. Bergman, I. G. Ivanov, A. Henry, and E. Janzén; Phys. Rev. B59 (1999) (1956).

Google Scholar

[10] T. Egilsson, I.G. Ivanov, A. Henry, and E. Janzén, Physica B 273, 677 (1999).

Google Scholar

[11] C.Q. Chen, R. Helbig, R. Winkler, A. Wysmolek and M. Potemski, Mat. Sc. Form 353-356 (2001) 361.

Google Scholar

[12] A.N. Safonov and E.C. Lightowlers; Mater. Sci. and Eng. B58 (1999) 39.

Google Scholar

[13] B. Monemar, P. O. Holtz, H. P. Gislason, N. Magnea, Ch. Uihlein, and P. L. Liu; Phys. Rev. B 32 (1985) 3844.

DOI: 10.1103/physrevb.32.3844

Google Scholar

[14] B. Aradi, A. Gali, P- Deak, N-T. Son and E. Janxén, Proc. of the ICSCRM2001; Tsukuba, Japan, Oct 28 - Nov 2, 2001; Mater. Sci. Forum 389-393 (2002) 561.

Google Scholar