Paper Titles
Photoluminescence Study of C-H and C-D Centers in 4H SiC
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Optical Characterization of Full SiC Wafer
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Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
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Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research
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Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies
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Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
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Raman Scattering by Coupled Phonon-Plasmon Modes
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Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy
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Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
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Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

605-608

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.605

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Online since:

June 2004

Authors:

Vytautas Grivickas, Paulius Grivickas, Jan Linnros, Augustinas Galeckas

Keywords:

Direct Band Gap Transitions, Free-Carrier Absorption, M and L Critical Points, Time-Resolved Spectroscopy, Two-Photon Absorption Coefficient

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

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