Paper Titles
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
p.993
Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range
p.997
Influence of Irradiation on Excess Currents in SiC pn Structures
p.1001
A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
p.1005
SiC Materials and Technologies for Sensors Development
p.1009
Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors
p.1015
Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors
p.1021
Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
p.1025
High Energy Resolution Detectors Based on 4H-SiC
p.1029

SiC Materials and Technologies for Sensors Development

Article Preview

Abstract:

Silicon Carbide has proven its strong interest for power and high frequency devices but it also has superior characteristics for application in the sensors and MEMS fields. The characteristic requirements of the starting material are different from that of power devices since the level of defects is not so critical while the layer stress is important especially in 3C-SiC on Si. The keyprocess for MEMS fabrication is the etching, which is progressing thanks to ICP process improvements. A perfect control of the etching step could allow the obtention of nano-resonators in SiC with fairly superior characteristics to the Si ones. Other electrical sensors for high temperature application such as gas sensors or Hall sensors have been also successfully developed taking profit of the deep etching process improvement and high temperature contact developments.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

1009-1014

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.1009

Citation:

Cite this paper

Online since:

May 2005

Authors:

Philippe Godignon

Keywords:

Biomedical Sensors, Hall Sensor, SiC Micromachining, SiC Sensors

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] J. Shor, L. Bemis, A. Kurtz, IEEE Trans. on Electron Devices, Vol. 41, nº5, May1994, p.661.

Google Scholar

[2] G. Krotz, C. Wagner, W. Legner, H. onntag, H. Moller, G. Muller, Proc. of Int. Conf on SiC and Related Materials, Kyoto, Japan1995, p.829.

Google Scholar

[3] R. Okojie, A. Ned, A. Kurtz, Proc. of Transducer '97, Chicago June 16-19, 1997, p.1407.

Google Scholar

[4] J.L. Robert, S. Contreras, J. Camassel, J. Pernot, Capteur effet Hall et /ou de température pour le domaine des hautes températures- Patent n INPI 0011087 30/08/00-PCT/FR01/02703 30/08/01.

Google Scholar

[5] S. Santavirta, M. Takagu, L. Nordsletten, P. Aspenberg, A. Anttila, R. Lappalainen, Y. Konttinen, Arch Orthop. Traum. Surg., vol. 118 (1998), p.89.

Google Scholar

[6] P. González et al., Biomaterials, 24 (2003), p.4827.

Google Scholar

[7] A. Catellani, G. Galli, P. Rigolli, Physical Review B, 62 (2000), p.4794.

Google Scholar

[8] G. Galli, A. Catellani, F. Gygi, Physical Rev. Letter, 83 (1999), p. (2006).

Google Scholar

[9] P. Godignon, R. Perez, D. Tournier, N. Mestres, H. Mank, D. Turover, SiC power diode improvement by fine surface polishing, Proc. of MRS Spring Meeting, San Francisco (USA), 12-16 April (2004).

DOI: 10.1557/proc-815-j5.12

Google Scholar