Paper Titles
Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range
p.997
Influence of Irradiation on Excess Currents in SiC pn Structures
p.1001
A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery
p.1005
SiC Materials and Technologies for Sensors Development
p.1009
Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors
p.1015
Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors
p.1021
Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
p.1025
High Energy Resolution Detectors Based on 4H-SiC
p.1029
High Temperature Hydrocarbon Sensing with Pt-Thin Ga2O3-SiC Diodes
p.1033

Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors

Article Preview

Abstract:

High performance SiC detectors for ionising radiation have been designed, manufactured and tested. Schottky junctions on low-doped epitaxial 4H-SiC with leakage current densities of few pA/cm2 at room temperature has been realised at this purpose. The epitaxial layer has been characterised at different dose of radiations in order to investigate the SiC radiation hardness. The response of the detectors to alpha and beta particle and to soft X-ray have been measured. High energy resolution and full charge collection efficiency have been successfully demonstrated.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

1015-1020

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.1015

Citation:

Cite this paper

Online since:

May 2005

Authors:

Giuseppe Bertuccio, Simona Binetti, S. Caccia, R. Casiraghi, Antonio Castaldini, Anna Cavallini, Claudio Lanzieri, Filippo Nava, Alessia Le Donne, Sergio Pizzini, L. Rigutti, G. Verzellesi

Keywords:

Radiation Detector, Radiation Spectroscopy, X-Ray Spectroscopy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] F.H. Ruddy, A.R. Dulloo, , J.G. Seidel, S. Seshadri and L. B. Rowland, Development of a Silicon Carbide Radiation Detector, IEEE Transaction on Nuclear Science, vol. 45 (1998) 536- 541.

DOI: 10.1109/23.682444

Google Scholar

[2] F. Nava, P. Vanni, C. Lanzieri, C. Canali, Epitaxial silicon carbide charge particle detectors, Nucl. Instr. and Meth. A437 (1999), 354-358.

DOI: 10.1016/s0168-9002(00)00162-5

Google Scholar

[3] G. Bertuccio, R. Casiraghi, Study of Silicon Carbide for X-Ray Detection and Spectroscopy, IEEE Trans. on Nuclear Science, vol. 50, no. 1, 2003, pp.175-185.

DOI: 10.1109/tns.2003.807855

Google Scholar

[4] Nava F.; Wagner G.; Lanzieri C.; Vanni P.; Vittone E. Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers, Nuclear Instrument And Methods In Physics Research, vol. A510, 2003, pp.273-280.

DOI: 10.1016/s0168-9002(03)01868-0

Google Scholar

[5] Castaldini A.; Cavallini A.; Nava F; Fuochi P G; Vanni P. Electron induced damage effects in 4H-SiC Schottky diodes, Materials Science Forum. vol. 439, 2003, pp.433-436.

DOI: 10.4028/www.scientific.net/msf.433-436.439

Google Scholar

[6] M. Jaksic, Z. Bosnjak, D. Gracin, Z. Medunic, Z. Pastuovic, E. Vittone, F. Nava, Nuclear Instruments and Methods in Physics Research B, Volume 188, 2002, pp.130-134.

Google Scholar

[7] Le Donne A, Binetti S, Acciarri M, Pizzini S. Electrical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers, Diamond and Related Materials 13, 2004, pp.414-418.

DOI: 10.1016/j.diamond.2003.11.079

Google Scholar