Paper Titles
Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
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CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
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Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
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Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
p.121
Is the Al Solubility Limit in SiC Temperature Dependent or not?
p.125
Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
p.129
LPE of Silicon Carbide Using Diluted Si-Ge Flux
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Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
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Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
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Is the Al Solubility Limit in SiC Temperature Dependent or not?

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Abstract:

The so-called VLS (Vapour-Liquid-Solid) mechanism in an Al-Si melt has recently demonstrated the capability to grow at low temperature single crystalline 4H-SiC layers, with a high Al content. Using the newly developed VLS technique, we have deposited several 4H-SiC layers and determined the incorporated Al level by SIMS (Secondary Ion Mass Spectroscopy). Depending on the sample, we have found that the SIMS doping level ranges from 5x1019 to 1x1021 at.cm-3. This last value is the highest one reported so far for in-situ doped SiC:Al. From TEM (Transmission Electron Microscopy) analyses we show that the layers are single crystals, with a high density of defects located only at the lower interface and no foreign phase inclusion. These results compare well with the ones obtained in previous works using alternative doping techniques, like ion implantation, chemical vapour deposition or sublimation. It thus suggests that Al solubility limit in SiC is rather temperature independent.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

125-128

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.125

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Online since:

May 2005

Authors:

Christophe Jacquier, Gabriel Ferro, Marcin Zielinski, Efstathios K. Polychroniadis, A. Andreadou, Jean Camassel, Yves Monteil

Keywords:

Al Doping, Epitaxy, Solubility, Vapour-Liquid-Solid

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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