Paper Titles
Optical Characterization of Deep Level Defects in SiC
p.341
Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide
p.347
Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
p.351
Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
p.355
Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
p.359
Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
p.365
Recombination Enhanced Defect Annealing in 4H-SiC
p.369
Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
p.373
Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
p.377

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide

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Abstract:

The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2 MeV. The electronic levels associated with the irradiation-induced defects were analyzed by current-voltage characteristics and deep level transient spectroscopy measurements up to 700 K. In the same temperature range the apparent free carrier concentration was measured by capacitance-voltage characteristics to monitor possible compensation effects due to the deep level associated to the induced defects. Introduction rate, enthalpy and capture cross-section of such deep levels were compared and some conclusions about the nature of the defects were drawn.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

359-364

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.359

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Online since:

May 2005

Authors:

Antonio Castaldini, Anna Cavallini, L. Rigutti, Filippo Nava

Keywords:

Compensation, Deep Level, Defect, DLTS, Introduction Rate, Irradiation, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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