Paper Titles
Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
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A New Model for the DI-Luminescence in 6H-SiC
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Observation of Vacancy Clusters in HTCVD Grown SiC
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Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC
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The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC
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The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC
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Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
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High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance Study
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The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC

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Abstract:

We identify the VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC samples. Based on the analysis of new photo-excited EPR spectra, and supported by theoretical calculations, it was possible to establish its microscopic structure and to conclude that this complex is formed from the first product of the Si-vacancy annealing, the VSiCSi complex (also known as P6/P7 centers).

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

477-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.477

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Online since:

May 2005

Authors:

M.V.B. Pinheiro, E. Rauls, Uwe Gerstmann, Siegmund Greulich-Weber, Johann Martin Spaeth

Keywords:

Annealing, Electron Irradiation, EPR, Silicon Carbide (SiC), Silicon Vacancy, VSiCSi(SiCCSi) Complex

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

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