Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS

P. Zhao; E. Rusli; Jun Hai Xia; Chung Ming Tan; Y. Liu; Chin Che Tin; S.F. Yoon; Weiguang Zhu; J. Ahn

doi:10.4028/www.scientific.net/MSF.483-485.653

Paper Titles

Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
p.637

Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si⁺-/N⁺-Co-Implanted 4H-SiC
p.641

Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
p.645

n⁺/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature
p.649

Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS
p.653

The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
p.657

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.661

Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
p.665

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N₂O and NO Ambient
p.669

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Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS

Abstract:

In this work, we present results on the study of bonding and concentration of carbon in 4H-SiC MOS structure by x-ray photoelectron spectroscopy (XPS). The XPS spectra were fitted by several Gaussian lineshape functions. It is found that the so-called carbon clusters (C-C bonds) appear at the interface of SiO2/SiC, but are not seen in the oxide bulk. However, there are still some SiOxCy and Si-C bonds inside the oxide and the integrated area ratio of SiOxCy/Si-C bonds increases when further away from the SiO2/SiC interface. These observations can be interpreted in terms of the dynamic oxidation process that transforms Si-C bonds into SiOxCy bonds, which are then further oxidized to form SiO2 bonds.