Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Antonella Poggi; Andrea Parisini; Sandro Solmi; Roberta Nipoti

doi:10.4028/www.scientific.net/MSF.483-485.665

Paper Titles

n⁺/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature
p.649

Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS
p.653

The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
p.657

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.661

Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
p.665

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N₂O and NO Ambient
p.669

4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
p.673

High-Reliability ONO Gate Dielectric for Power MOSFETs
p.677

An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO₂ MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study
p.681

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Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

Abstract:

The wet oxidation of (0001), Si-face, 6H-SiC pre-amorphised by Ar+ implantation has been investigated in the temperature range between 750 and 950 °C. Electron microscopy analysis has been performed to obtain information on the evolution of the amorphous layer during the oxidation process. When the oxidation occurs on the amorphous substrate the observed rate is given by VOx(a)=3.8x107exp(-1.6eV/kT) nm/min, by far faster than that observed on single or polycrystalline 6H-SiC. For amorphous layer thickness of a few hundreds nanometer and processing time of a few tens of minutes this happens up to oxidation temperatures of about 910 °C, owing to the concomitant recrystallization process. At higher temperature, our oxidation data support the existence of a sudden variation of the recrystallization process that rapidly reduces the residual amorphous region and, consequently, the oxide thickness. However, it appears that this second recrystallization stage is faster than previously estimated. Structural detail of the starting amorphous-crystalline interface and of the early-recrystallized layers are reported and discussed.