Paper Titles
Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices
p.845
Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs
p.849
High Power Lateral Epitaxy MESFET Technology in Silicon Carbide
p.853
Broadband RF SiC MESFET Power Amplifiers
p.857
Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs
p.861
Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
p.865
High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
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Wannier-Stark Localization Effects in 6H-SiC JFETs
p.873
Effective Edge Termination Design in SiC VJFET
p.877

Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs

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Abstract:

Because SiC does not have velocity overshooting behaviour, the current density of SiC metal-semiconductor field-effect transistors (MESFETs) is restricted by low drift velocity in the parasitic region between source and gate where the applied electric field is low. In addition, the extension of the depletion region toward the drain side at high drain voltages increases the effective channel length and, as a result, lowers the cut-off frequency due to the increased transit time.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

861-864

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.861

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Online since:

May 2005

Authors:

Ho Young Cha, Y.C. Choi, Lester F. Eastman, Michael G. Spencer, L. Ardaravičius, A. Matulionis, O. Kiprijanovič

Keywords:

Metal-Semiconductor Field-Effect Transistors, Mobility, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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