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Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
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Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States
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Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures
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BVCEO Versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors

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Abstract:

The letter presents a set of design curves that relate the open-base breakdown voltage BVCEO to the open emitter breakdown voltage BVCBO for 4H (0001 and 11-20 orientations) and 6H SiC NPN and PNP Bipolar Junction Transistors. We also present design curves pertaining to the variation of BVCEO with base doping and minority carrier diffusion length in the base for (0001) 4H-SiC BJTs for a 4x1015 cm-3 doped and 12µm thick drift layer for both NPN and PNP BJTs.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

893-896

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.893

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Online since:

May 2005

Authors:

S. Balachandran, T. Paul Chow, Anant K. Agarwal, Skip Scozzie, Kenneth A. Jones

Keywords:

Bipolar Junction Transistor (BJT), Breakdown Voltage, Impact Ionization Coefficient, Ionization Integral, Poly-Type, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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