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Defects and Diffusion in Semiconductors

Defect and Diffusion Forum Volumes 210 - 212

• Papers
• Abstracts

• p1 Metastablility of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy   [ 798 K ]
  Authors: P.K. Giri
• p15 Optimization of Off-Oriented Ge Substrates for MOVPE-Grown GaAs Solar Cells   [ 339 K ]
  Authors: M.K. Hudait, S.B. Krupanidhi
• p21 On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation   [ 1 M ]
  Authors: Liudmila I. Fedina
• p37 Cavity Formation in Helium-Implanted Silicon - Temperature Dependence   [ 372 K ]
  Authors: Jean François Barbot, Erwan Oliviero, Marie-Laure David, Sophie Rousselet, Marie France Beaufort, A. van Veen
• p43 Shear Moduli of Silicon and Germanium in Semiconducting and Metallic Phases   [ 573 K ]
  Authors: Leonid Burakovsky, Dean L. Preston
• p55 Tracer Diffusion in the Concentrated Lattice Gas with Self-Excitation   [ 210 K ]
  Authors: Irina V. Belova, Graeme E. Murch
• p61 Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors   [ 438 K ]
  Authors: A. Aydinli, N.M. Gasanly
• p71 Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics   [ 566 K ]
  Authors: L. Wang, C.S. Murthy, P. Clancy
• p81 Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy   [ 340 K ]
  Authors: Hoon Young Cho
• p89 Redistribution of Point Defects in the Crystalline Lattice of a Semiconductor in an Inhomogeneous Temperature Field   [ 595 K ]
  Authors: Arthur Medvid