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Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

473-482

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.473

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Online since:

September 2003

Authors:

P. Zaumseil, D. Krüger, R. Kurps, O.V. Fursenko, Peter Formanek

Keywords:

AES, Epitaxial Layer, SiGe HBT, SIMS, Spectroscopic Ellipsometry (SE), TEM, X-Ray Diffraction (XRD), XRR

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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