HOME CONTACT

Username: Password:

> @scientific.net

Defects and Diffusion in Semiconductors - An Annual Retrospective VII

Defect and Diffusion Forum Volumes 230 - 232

• Papers
• Abstracts

• p1 The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry   [ 3 M ]
  Authors: William M. Vetter
• p17 Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides   [ 1 M ]
  Authors: S.J. Pearton, C.R. Abernathy, G.T. Thaler, R.M. Frazier, Y.H. Heo, M. Ivill, D.P. Norton, Yong Duk Park
• p47 Calculating the Properties of Defects in Semiconductors at Finite Temperatures   [ 400 K ]
  Authors: Stefan K. Estreicher, Mahdi Sanati
• p55 Role of Cation Vacancy-Related Defects in Self-Assembling of CdSe Quantum Dots   [ 154 K ]
  Authors: L.V. Borkovska, R. Beyer, M. Hoffmann, A. Holzhey, N.O. Korsunska, Yu.G. Sadofyev, Joerg Weber
• p67 Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors   [ 267 K ]
  Authors: R.Ya. Golovchak, Oleg I. Shpotyuk
• p81 First Principles Calculations of Hydrogen Aggregation in Silicon   [ 291 K ]
  Authors: N. Martsinovich, A.L. Rosa, M.I. Heggie, Patrick R. Briddon
• p93 Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures   [ 547 K ]
  Authors: O. Yastrubchak, T. Wosiński, J.Z. Domagała, E. Łusakowska
• p101 On the Photo-Ionization Cross-Section of DX Centers   [ 430 K ]
  Authors: Ewa Płaczek-Popko
• p111 Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy   [ 909 K ]
  Authors: Ph. Ebert
• p125 Investigation and Identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques   [ 220 K ]
  Authors: Olivier Palais, P. Hidalgo