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Defects and Diffusion in Semiconductors - an Annual Retrospective VIII

Defect and Diffusion Forum Volumes 245 - 246

• Papers
• Abstracts

• p1 The Size Distribution of Defect Clusters in n-Si (FZ, Cz), Irradiated by Fast Neutrons   [ 178 K ]
  Authors: A.P. Dolgolenko, G.P. Gaidar
• p9 Role of Diffusion in the Shaping of the High-Absorption State in a Resonatorless Exciton Bistable System   [ 194 K ]
  Authors: Yuriy V. Gudyma, Ivanna V. Kruglenko
• p15 On the Interaction of Dislocations with Impurities in Silicon   [ 258 K ]
  Authors: Daniela Cavalcoli, Anna Cavallini
• p23 Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors   [ 199 K ]
  Authors: S.K. Chaudhuri, P.V. Rajesh, S.S. Ghugre, D. Das
• p29 DFT Analysis of the Indium-Antimony-Vacancy Cluster in Silicon   [ 377 K ]
  Authors: M.M. De Souza, J.P. Goss
• p39 Growth and Characterization of Boron-Doped Si_1-x-yGe_xC_y Layers Grown by Reduced Pressure Chemical Vapor Deposition   [ 459 K ]
  Authors: H.H. Radamson, J. Hållstedt
• p51 Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide   [ 1 M ]
  Authors: N.C. Halder