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Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application

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Abstract:

Silicon crystals, doped with moderate concentration of magnesium or lithium, have been grown for application as optically pumped donor silicon lasers for the terahertz spectral region. The pedestal growth technique accompanied with axial-loaded dopant pills enabled manufacturing of large silicon crystals with a homogeneous donor distribution in the range from 1014 to 1016 cm-3, as required for intracenter silicon lasers. Terahertz-range photoluminescence from the grown crystals has been observed.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

589-594

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.589

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Online since:

October 2007

Authors:

Nikolay V. Abrosimov, N. Nötzel, H. Riemann, K. Irmscher, Sergeij G. Pavlov, Heinz Wilhelm Hübers, Ute Böttger, Philippe M. Haas, N. Drichko, M. Dressel

Keywords:

Double Donors, Interstitial Donor, Silicon Laser

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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