Thinning of SiC Wafer by Plasma Chemical Vaporization Machining

Yasuhisa Sano; Takehiro Kato; Tsutomu Hori; Kazuya Yamamura; Hidekazu Mimura; Yoshiaki Katsuyama; Kazuto Yamauchi

doi:10.4028/www.scientific.net/MSF.645-648.857

Paper Titles

Nanostructuring Techniques for 3C-SiC(100) NEMS Structures
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SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment
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Temperature Facilitated ECR-Etching for Isotropic SiC Structuring
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Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC
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Thinning of SiC Wafer by Plasma Chemical Vaporization Machining
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Property Modification of 3C-SiC MEMS on Ge-Modified Si(100) Substrates
p.861

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
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Electric Discharge Machining for Silicon Carbide in Gases of Ar, Ar-CH₄ and Ar-CF₄ Mixtures
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Effect of In Situ Doped Nitrogen Concentrations on the Characteristics of Poly 3C-SiC Micro Resonators
p.873

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Thinning of SiC Wafer by Plasma Chemical...

Thinning of SiC Wafer by Plasma Chemical Vaporization Machining

Abstract:

In order to reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin an SiC wafer with a high yield rate by conventional mechanical machining because its high hardness and brittleness cause cracking and chipping during thinning. In this study, a small rectangular SiC sample was thinned by plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. As a result, the sample was successfully thinned to 40 m without any cracking or chipping. Furthermore, the surface roughness was improved after thinning, and the edge of the wafer became rounded automatically. Therefore, PCVM can be used as an effective method for thinning SiC wafers.