Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition

Hiroaki Saitoh; Akira Manabe; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.527-529.223

Paper Titles

Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
p.207

Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
p.211

Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
p.215

Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
p.219

Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
p.223

Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
p.227

Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
p.231

Ab Initio Studies of the Surface Reaction of Si₂C and SiC₂ with Si on the 4H-SiC (000-1) Surface
p.235

Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
p.239

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Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition

Abstract:

We have investigated the morphology and doping characteristics of 4H-SiC epilayers grown on 13o-22o off-axis (0001) substrates by horizontal hot-wall CVD. Step bunching is not observed on 18o off-axis substrates as well as on other substrates with large off-angles. The rms roughness is a minimum (as small as 0.10 nm) on 18o off-axis (0001). Under C-rich condition (C/Si >1.0), the donor concentration increases by increasing the off-angle, when the off-angle is larger than 15o. This trend in doping characteristic is enhanced in CVD growth at 1450-1500oC. At a high temperature of 1600oC, however, the off-angle dependence of donor concentration is significantly reduced. Epitaxial growth on 4H-SiC(000-1) with large off-angles is also reported.