Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces

Florin Ciobanu; Thomas Frank; Gerhard Pensl; Valeri V. Afanas'ev; Sheron Shamuilia; Adolf Schöner; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.527-529.991

Paper Titles

Investigation of SiO₂-SiC Interface by High-Resolution Transmission Electron Microscope
p.975

Interfacial Properties of SiO₂ Grown on 4H-SiC: Comparison between N₂O and Wet O₂ Oxidation Ambient
p.979

Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
p.983

Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N₂O Annealing
p.987

Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO₂-Interfaces
p.991

Process-Dependent Charges and Traps in Dielectrics on SiC
p.995

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC
p.999

Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
p.1003

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
p.1007

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Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO₂-Interfaces

Abstract:

A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/ptype 4H-SiC epilayers prior to a standard oxidation process. The corresponding MOS capacitors are investigated by conductance and internal photoemission spectroscopy. The effect of N-implantation on the density of interface traps Dit is studied and a model is proposed, which consistently explains the observed results.