1.2 kV Pin Diodes with SiCrystal Epiwafer

Heu Vang; Christophe Raynaud; Pierre Brosselard; Mihai Lazar; Pierre Cremillieu; Jean Louis Leclercq; Sigo Scharnholz; Dominique Planson; Jean-Pierre  Chante

doi:10.4028/www.scientific.net/MSF.556-557.901

Paper Titles

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
p.881

The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes
p.885

Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects
p.889

Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
p.895

1.2 kV Pin Diodes with SiCrystal Epiwafer
p.901

Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation
p.905

Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
p.909

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n⁺p Diodes Irradiated with Gold Ions
p.913

Effects of Very High Neutron Fluence Irradiation on p⁺n Junction 4H-SiC Diodes
p.917

HomeMaterials Science ForumMaterials Science Forum Vols. 556-5571.2 kV Pin Diodes with SiCrystal Epiwafer

1.2 kV Pin Diodes with SiCrystal Epiwafer

Abstract:

Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material. The European manufacturer SiCrystal furnishes now some epiwafers for the fabrication of 1,2kV devices. In this paper we present 4H-SiC 1.2 kV pin diodes with a JTE termination realized on a SiCrystal epiwafer. The devices exhibit a blocking voltage of 1.2 kV, a current density of 420 A.cm-2 and a specific differential series resistance of 4.4 m-⋅cm2. The yield of fabricated diodes with a breakdown voltage greater 600 V is superior to 75%.