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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Formation of Passivated Layers in P-Type SiC by...

Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

933-936

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.933

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Online since:

May 2000

Authors:

N. Achtziger, C. Hülsen, Martin S. Janson, Margareta K. Linnarsson, Bengt Gunnar Svensson, W. Witthuhn

Keywords:

Acceptor, Diffusion, Hydrogen, Implantation, Passivation, Resistivity

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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