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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

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• p851 ODMR-MCD Study of the Zinc Vacancy and Related Complexes in ZnSe   [ 325 K ]
  Authors: D.Y. Jeon, H.P. Gislason, G.D. Watkins
• p857 Photoluminescence Spectroscopy of Proton Implantation Induced Defects in CdTe and ZnTe   [ 214 K ]
  Authors: L. Svob, Y. Marfaing
• p863 Acceptors and Donors in the Wide-Gap Semiconductors ZnO and SnO₂   [ 178 K ]
  Authors: Herbert Wolf, S. Deubler, Doris Forkel-Wirth, H. Foettinger, M. Iwatschenko-Borho, F. Meyer, M. Renn, W. Witthuhn, Reinhard Helbig
• p869 On the Influence of Doping and Annealing on Oxygen-Related Defects in Silicon   [ 207 K ]
  Authors: Peter Mascher, S. Dannefaer, D. Kerr, S.K. Hahn
• p875 The Electronic Structure of the Oxygen-Vacancy Complex in Silicon   [ 249 K ]
  Authors: R. Van Kemp, E.G. Sieverts, C.A.J. Ammerlaan
• p881 Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon   [ 336 K ]
  Authors: Etienne G. Colas, Eicke R. Weber, R. Hull
• p887 Enhanced Oxygen Diffusion in Silicon at Low Temperatures   [ 262 K ]
  Authors: A.K. Tipping, R.C. Newman, D.C. Newton, J.H. Tucker
• p893 The 3942 cm^-1 Optical Band in Irradiated Crystalline Silicon   [ 250 K ]
  Authors: Gordon Davies, Edward C. Lightowlers, Michael Stavola, K. Bergman, Bengt G. Svensson
• p899 N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon   [ 268 K ]
  Authors: H. Itoh, Kenji Murakami, K. Takita, Kohzoh Masuda
• p905 Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon   [ 228 K ]
  Authors: V.M.S. Gomes, J.R. Leite
• p911 Chalcogen Double Donors in Silicon   [ 240 K ]
  Authors: Gerhard Pensl, G. Roos, C. Holm, P. Wagner
• p917 The Ultraviolet Absorption due to Single Substitutional Nitrogen in Diamond   [ 171 K ]
  Authors: Maria Helena Nazaré
• p923 The ESR Investigation of a Singly Ionized Sulphur Centre in Ib Diamonds   [ 192 K ]
  Authors: J.A. Van Wyk, J.H.N. Loubser
• p929 Electronic and Vibrational Absorption of Interstitial Carbon in Silicon   [ 252 K ]
  Authors: R. Woolley, Edward C. Lightowlers, A.K. Tipping, M. Claybourn, R.C. Newman
• p935 Ion-Implanted Oxygen Isotopes in Silicon   [ 268 K ]
  Authors: H.J. Stein