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Shallow Impurities in Semiconductors V

Materials Science Forum Volumes 117 - 118

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• p291 Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy   [ 165 K ]
  Authors: K. Ikuta, Haruki Yokoyama, Naohisa Inoue
• p297 Partial Ferromagnetic Order in p-Type (In, Mn) as Diluted Magnetic III-V Semiconductors   [ 219 K ]
  Authors: H. Ohno, H. Munekata, T. Penney, S. von Molnár, L. Chang
• p303 Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP   [ 277 K ]
  Authors: Akihito Taguchi, Kenichiro Takahei
• p309 Infrared Absorption Lines in Hydrogen-Plasma Treated Se-Doped GaAs   [ 245 K ]
  Authors: J.H. Svensson, Joerg Weber
• p315 Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine   [ 181 K ]
  Authors: Shigefusa F. Chichibu, A. Iwai, Yuko Nakahara, S. Matsumoto, Hiroyuki Higuchi, Long Wei, Shoichiro Tanigawa
• p321 Anti-Stokes Photoluminescence Related to the Deep Donor States in Si Double δ-Doped Al_xGa_1-xAs   [ 300 K ]
  Authors: M.R. Junnarkar, E. Yamaguchi, T. Saku
• p327 Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing   [ 174 K ]
  Authors: E.A. de Andrada e Silva, D. Wang, I.C. da Cunha Lima
• p333 Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells   [ 237 K ]
  Authors: Q.X. Zhao, T. Westgaard, Bo Monemar, B.O. Fimland, K. Johannessen
• p339 Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells   [ 235 K ]
  Authors: C.I. Harris, M. Stutzmann, K. Köhler
• p345 Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence   [ 235 K ]
  Authors: N. Kamata, E. Kanoh, T. Ohsaki, K. Yamada
• p351 Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD   [ 280 K ]
  Authors: L. Lu, J. Zhou, W. Zhang, Masayoshi Umeno
• p357 Optical Absorption Lines in Heat-Treated GaAs   [ 215 K ]
  Authors: Masashi Suezawa, Koji Sumino
• p363 Te-Related Donor States in Al_xGa_1-xAs   [ 253 K ]
  Authors: J. G. Kang, Q. Huang, K. Hoshikawa, T. Fukuda
• p369 Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -   [ 199 K ]
  Authors: Kenji Murakami, Takasumi Ohyanagi, Kazusato Hara, K. Masuda
• p375 Donor Concentration Dependence of GaP Luminescence   [ 187 K ]
  Authors: Teresa Monteiro, E. Pereira, F. Domingues-Adame, J. Piqueras