Shallow Impurities in Semiconductors V
| Paper Title | Page |
|---|---|
|
Thermal Process Dependence of Chromium Donor/Acceptor in Silicon Authors: M. Takiyama, Shigehiro Ohtsuka, M. Tachimori |
261 |
|
Authors: A.-M. Van Bavel, G. Langouche |
267 |
|
Defect Observation in Silicon Surface Layers by Surface Wave Resonance in RHEED Authors: Koushirou Ueda |
273 |
|
Differential Hall-Effect Spectroscopy of Rare-Earth Impurities (Ce, Er) in Silicon Authors: H. Nakayama, A. Matsuura, M. Kohno, Taneo Nishino |
279 |
|
Authors: C.I. Harris, Bo Monemar, P.O. Holtz, M. Sundaram, J.L. Merz, A.C. Gossard |
285 |
|
Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy Authors: K. Ikuta, Haruki Yokoyama, Naohisa Inoue |
291 |
|
Partial Ferromagnetic Order in p-Type (In, Mn) as Diluted Magnetic III-V Semiconductors Authors: H. Ohno, H. Munekata, T. Penney, S. von Molnár, L. Chang |
297 |
|
Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP Authors: Akihito Taguchi, Kenichiro Takahei |
303 |
|
Infrared Absorption Lines in Hydrogen-Plasma Treated Se-Doped GaAs Authors: J.H. Svensson, Joerg Weber |
309 |
|
Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine Authors: Shigefusa F. Chichibu, A. Iwai, Yuko Nakahara, S. Matsumoto, Hiroyuki Higuchi, Long Wei, Shoichiro Tanigawa |
315 |