Shallow Impurities in Semiconductors V
Materials Science Forum Volumes 117 - 118
doi:10.4028/www.scientific.net/MSF.117-118
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p471
Identification of Residual Donors in CdTe Grown by the Bridgman Method
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236 K
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Authors: S. Seto, A. Tanaka
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p477
Far-Infrared Magneto-Absorption of Donors in the Epitaxial ZnSe Layers on GaAs
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181 K
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Authors: R. Komeda, H. Nakata, T. Ohyama
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p483
Origin of Carrier Reduction by Annealing in n-Type ZnSe
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194 K
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Authors: T. Miyajima, Hideo Okuyama, Katsuhiro Akimoto, Long Wei, Shoichiro Tanigawa
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p489
Photoluminescence Characterization of Defecfs in CuGaS2 Crystals
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180 K
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Authors: S. Shirakata, Toshiki Miyazaki, S. Isomura
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p495
Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC
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249 K
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Authors: W. Götz, Adolf Schöner, Gerhard Pensl, W. Suttrop, Wolfgang J. Choyke, René A. Stein, S. Leibenzeder
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p501
Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons
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268 K
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Authors: H. Itho, M. Yoshikawa, I. Nashiyama, Long Wei, Shoichiro Tanigawa, S. Misawa, H. Okumura, S. Yoshida
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p507
Localized-Pair Recombination Nature of Visible Luminescence from Anodized Porous-Si
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257 K
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Authors: Yasunori Mochizuki, M. Mizuta
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p513
Visible Photoluminescence of Porous Silicon
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199 K
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Authors: H. Nishitani, H. Nakata, T. Ohyama, Yasufumi Fujiwara
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p519
Photoluminescence due to Zn-O Complexes in Silicon
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50 K
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Authors: J.D. Campion, M.O. Henry, K.G. McGuigan, Edward C. Lightowlers
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p521
High-Resolution EPR Spectroscopy of the Si-NL 10 Thermal Donor
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95 K
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Authors: T. Gregorkiewicz, H.H.P.Th. Bekman, C.A.J. Ammerlaan, W. Knap, L.C. Brunel, G. Martinez
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p523
Morphology of Oxide Precipitates in Czochralski Silicon Crystals
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60 K
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Authors: Koji Sueoka, N. Ikeda, T. Yamamoto, S. Kobayashi
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p525
Site Change of Li Atoms in ZnSe by Photoirradiation
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65 K
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Authors: M. Ichimura, T. Wada, S. Fujita
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p527
Characterization of Impurities in Si(C2H5O)4 for Efficient SiO2 Production in ULSI Technology
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62 K
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Authors: T. Danno, K. Seki