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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

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• p71 The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide   [ 299 K ]
  Authors: Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Shao Ping Wang, A.G. Timmerman
• p75 Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method   [ 487 K ]
  Authors: Fusao Hirose, Yasuo Kitou, Naoki Oyanagi, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai
• p79 Observation of Planar Defects in 2-inch SiC Wafer   [ 343 K ]
  Authors: Hideaki Tanaka, Taro Nishiguchi, Makato Sasaki, Shigehiro Nishino
• p83 Flux-Controlled Sublimation Growth by an Inner Guide-Tube   [ 410 K ]
  Authors: Yasuo Kitou, Wook Bahng, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai
• p87 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method   [ 210 K ]
  Authors: Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai
• p91 'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging   [ 229 K ]
  Authors: Peter J. Wellmann, Z.G. Herro, Thomas L. Straubinger, Albrecht Winnacker
• p95 Influence of the Crystal Thickness on the SiC PVT Growth Rate   [ 213 K ]
  Authors: Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Roman Drachev, I.I. Khlebnikov, Tangali S. Sudarshan
• p99 Micropipe Formation Model via Surface Step Interaction   [ 217 K ]
  Authors: Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Takashi Aigo, Hirokatsu Yashiro
• p103 Self-Healing Phenomenon of Micropipes in Silicon Carbide   [ 386 K ]
  Authors: Atsuto Okamoto, Yoshiki Seno, Naohiro Sugiyama, Fusao Hirose, Kazukuni Hara, Toshihiko Tani, Daisuke Nakamura, Nobuo Kamiya, Shoichi Onda
• p107 A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth   [ 601 K ]
  Authors: Naoki Oyanagi, Shinichi Nishizawa, Kazuo Arai
• p111 Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth   [ 318 K ]
  Authors: Tomohisa Kato, Naoki Oyanagi, Yasuo Kitou, Shinichi Nishizawa, Kazuo Arai
• p115 The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates   [ 552 K ]
  Authors: Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino
• p119 Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates   [ 366 K ]
  Authors: Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino
• p123 The Development of 4H-SiC {03-38} Wafers   [ 289 K ]
  Authors: Koji Nakayama, Youichi Miyanagi, Hiromu Shiomi, Shigehiro Nishino, Tsunenobu Kimoto, Hiroyuki Matsunami
• p127 Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth   [ 259 K ]
  Authors: Matthias Bickermann, Roland Weingärtner, Dieter Hofmann, Thomas L. Straubinger, Albrecht Winnacker