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Polycrystalline Semiconductors III

Solid State Phenomena Volumes 37 - 38

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• p225 On Some Photoelectrical Interface Processes in Mixed Semiconductor Heterostructures with Photosynthetic Pigment   [ 332 K ]
  Authors: M. Gherghel, I. Licea
• p231 Polycrystalline Silicon-Silicon Carbide Emitters for Heterojunction Transistors   [ 703 K ]
  Authors: H.S. Gamble, G.A. Armstrong
• p243 Investigation of the Defect Distribution in Polycrystalline Silicon   [ 396 K ]
  Authors: A. Zozime, O.F. Vyvenko, I. Hanke, Wolfgang Schröter, K. Ahlborn, K. Heisig
• p249 Properties of Thermoluminescence and Thermally Stimulated Conductivity in Polycrystalline Materials: Numerical Studies   [ 269 K ]
  Authors: A. Mandowski, J. Swiatek
• p257 Microscopic Processes in Crystallisation   [ 1 M ]
  Authors: J.L. Batstone, C. Hayzelden
• p269 Laser Beam Application in Semiconductor Technology   [ 587 K ]
  Authors: Toshiyuki Sameshima
• p281 In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films   [ 289 K ]
  Authors: N. Layadi, Pere Roca i Cabarrocas, J. Huc, J.-Y. Parey, B. Drévillon
• p287 Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films   [ 538 K ]
  Authors: J. Stoemenos, N.A. Economou, L. Haji, M. Bonnel, N. Duhamel, B. Loisel
• p293 Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition   [ 600 K ]
  Authors: J.P. Guillemet, Bernard Pieraggi, A. Claverie, B. Legros-de Mauduit
• p299 Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon   [ 303 K ]
  Authors: S.D. Brotherton, D.J. McCulloch, M.J. Edwards
• p305 Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si₂H₆   [ 244 K ]
  Authors: E. Campo, J.P. Guillemet, J.J. Pedroviejo, B. Legros-de Mauduit, E. Scheid
• p311 Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis   [ 365 K ]
  Authors: T. Kretz, R. Stroh, P. Legagneux, O. Huet, M. Magis, Didier Pribat
• p317 Grain Boundary Character Distribution in Rapidly Solidified and Annealed Silicon Ribbons   [ 320 K ]
  Authors: T. Watanabe, K.I. Arai, H. Terashima, H. Oikawa
• p323 Decomposition and Microstructure during Crystallization of Amorphous Ge_xSi_1-x Films   [ 387 K ]
  Authors: F. Edelman, Y. Komem, P. Werner, J. Heydenreich, S.S. Iyer
• p329 A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600°C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)   [ 349 K ]
  Authors: T.E. Dyer, J.M. Marshall, W. Pickin, A.R. Hepburn, J.F. Davies