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Articles by author: A. Pérez-Rodríguez

• Analysis of the Electric Field Influence on the Emission Rate of the Te-Related Center in GaAs_0.6P_0.4
  Published in: Defects in Semiconductors 14 (p533)
• Charge Storage Effects in Si Nanocrystals Embedded in SiO₂ Thin Films
  Published in: Polycrystalline Semiconductors VI (p243)
• Electrical Evaluation of Silicon on Insulator Structures Formed by Oxygen Implantation by Means of Frequency Resolved Photoconductivity Measurements
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p511)
• Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization
  Published in: Silicon Carbide and Related Materials - 1999 (p309)
• Influence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium Arsenide
  Published in: Defects in Semiconductors 15 (p1457)
• Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p391)
• On the Incorporation of Carbon In SiO₂ Layers
  Published in: Surface Diffusion and Surface Structure (p1)
• Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs
  Published in: Defects in Semiconductors 14 (p539)
• Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation
  Published in: Defects in Semiconductors 19 (p727)
• Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers
  Published in: Silicon Carbide and Related Materials 2000 (p591)