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Articles by author: Adrian R. Powell

• 100 mm 4HN-SiC Wafers with Zero Micropipe Density
  Published in: Silicon Carbide and Related Materials 2007 (p7)
• Critical Technical Issues in High Voltage SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2007 (p895)
• Defect Status in SiC Manufacturing
  Published in: Silicon Carbide and Related Materials 2008 (p3)
• Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2007 (p931)
• Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
  Published in: Silicon Carbide and Related Materials 2003 (p35)
• Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
  Published in: Silicon Carbide and Related Materials 2004 (p965)
• Generation and Properties of Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p17)
• Growth of Low Micropipe Density SiC Wafers
  Published in: Silicon Carbide and Related Materials - 1999 (p437)
• High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
  Published in: Silicon Carbide and Related Materials 2003 (p1105)
• High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
  Published in: Silicon Carbide and Related Materials 2001 (p23)
• Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p137)
• Large Diameter 4H-SiC Substrates for Commercial Power Applications
  Published in: Silicon Carbide and Related Materials 2003 (p41)
• Large Diameter, Low Defect Silicon Carbide Boule Growth
  Published in: Silicon Carbide and Related Materials 2000 (p3)
• Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
  Published in: Silicon Carbide and Related Materials 2006 (p213)
• SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
  Published in: Silicon Carbide and Related Materials 2007 (p77)