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CONFERENCE
12/9/2012 - 12/12/2012
ACAM7: The 7th Australasian Congress on Applied Mechanics
11/16/2012 - 11/18/2012
2nd International Conference on Manufacturing Engineering and Automation (ICMEA2012)
11/16/2012 - 11/18/2012
more...
Articles by author: Adrian R. Powell
19 papers on 2 pages:
1
[2]
[next]
100 mm 4HN-SiC Wafers with Zero Micropipe Density
Published in:
Silicon Carbide and Related Materials 2007
(p7)
Critical Technical Issues in High Voltage SiC Power Devices
Published in:
Silicon Carbide and Related Materials 2007
(p895)
Defect Status in SiC Manufacturing
Published in:
Silicon Carbide and Related Materials 2008
(p3)
Development of Large Area (up to 1.5 cm
2
) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
Published in:
Silicon Carbide and Related Materials 2007
(p931)
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
Published in:
Silicon Carbide and Related Materials 2003
(p35)
Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
Published in:
Silicon Carbide and Related Materials 2004
(p965)
Generation and Properties of Semi-Insulating SiC Substrates
Published in:
Silicon Carbide and Related Materials - 1999
(p17)
Growth of Low Micropipe Density SiC Wafers
Published in:
Silicon Carbide and Related Materials - 1999
(p437)
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
Published in:
Silicon Carbide and Related Materials 2003
(p1105)
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Published in:
Silicon Carbide and Related Materials 2001
(p23)
Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
Published in:
Silicon Carbide and Related Materials 2004
(p137)
Large Diameter 4H-SiC Substrates for Commercial Power Applications
Published in:
Silicon Carbide and Related Materials 2003
(p41)
Large Diameter, Low Defect Silicon Carbide Boule Growth
Published in:
Silicon Carbide and Related Materials 2000
(p3)
Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
Published in:
Silicon Carbide and Related Materials 2006
(p213)
SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
Published in:
Silicon Carbide and Related Materials 2007
(p77)
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